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15*. Andriy Romanyuk, Roland Steiner, >Viktor Melnik< and Verena Thommen Ultrasound-assisted oxidation of tungsten in oxygen plasma: the early stages of the oxide film growth // Surface and Interface Analysis 2006; 38: 12421246. Published online 19 June 2006 in Wiley InterScience.

16*. Romanyuk A.,,Oelhafen P., Kurps R., >Melnik V.< Use of ultrasound for metal cluster engineering in ion implanted silicon oxide. 2007 Applied Physics Letters. 90(1):013118 - 013118-3 January 2007. .. Scopus SNIP 3,52. http://scitation.aip.org/content/aip/journal/apl/90/1/10.1063/1.2430055

17*. Gudymenko O.I., ,Kladko V.P., >Melnik,V.P.< and ot. Peculiarities of the defect formation in the near-surface layers of Si single crystals under acoustostimulated implantation of ions of boron and arsenic . 2008. Ukrainian Journal of Physics. 3 Ukr. J. Phys. 2008, Vol. 53, N 2, p 140-145. 0,18. http://ujp.bitp.kiev.ua/?item=j&id=102

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19**. Dietmar Krueger; Rainer Kurps, of Frankfurt an der Oder (DE); Boris Romanjuk, Kiev (UA); >Viktor Melnik<, Kiev (UA); Jaroslav Olich, Kiev (UA) Method of fabricating ion implanted doping layers in semiconductor materials and integrated circuits made therefrom. Patent US 6358823 B1, 09.04.2002 .

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21*. >O. Martinyuk,<, D.Mazunov, >V.Melnik<, Ya. Olih, V. Popov, B, Romanyuk and I. Lisovskii. SiO2 and Si3N4 phase formation by ion implantation with in-situ ultrasound treatment. Science and Technology of Semiconductor - On - insulator Structures and Devices Operating in a Harsh Environment, 97-102. O 2005 Kluwer Academic Publishers, Printed in the Netherlands.

22*. >V.P. Melnik<, Y.M. Olikh, V.G. Popov, B.M. Romanyuk, Y.V. Goltvyanskii, A.A.. Evtukh. Characteristics silicon p-n junction formed by ion implantation with in-situ ultrasound treatment. Materials Science and Engineering B 124-125 (2005) 327-330.

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4, [1] . . ., > . .<, > . .<, > . .<, . . . V ̳. .-. . "i , " (-2011), ³, , , 19-21 2011 ., . 34.

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